Organic thin-film transistor and manufacturing method thereof

有機薄膜トランジスタ及びその製造方法

Abstract

【課題】有機ゲート絶縁膜を具備して柔軟性を有しながらもしきい電圧が低く漏れ電流が少ない薄膜トランジスタ及びその製造方法を提供する。 【解決手段】有機薄膜トランジスタ及びその製造方法を提供する。有機薄膜トランジスタは基板と基板上に位置するゲート電極を具備する。ゲート電極上に無機ゲート絶縁膜と有機ゲート絶縁膜の積層構造を有するゲート絶縁膜が位置する。ゲート絶縁膜上にゲート電極と重なる有機半導体層が位置する。したがって、柔軟性を有すると同時に漏れ電流が低減されて、低いしきい電圧を有する有機薄膜トランジスタを具現することができる。 【選択図】図4
PROBLEM TO BE SOLVED: To provide a thin-film transistor and a manufacturing method of the same, in which an organic gate insulating film is provided to result in lower threshold voltage and less amount of leakage current, while having flexibility. SOLUTION: An organic thin-film transistor and a manufacturing method of the same are provided. The organic thin-film transistor is provided with a substrate, and a gate electrode located on the substrate. A gate insulating film, having a laminated structure of an inorganic gate insulating film and an organic gate insulating film, is located on the gate electrode. An organic semiconductor layer overlapping on the gate electrode is located on the gate insulating film. Accordingly, flexibility is provided and leakage current is reduced, at the same time. Consequently, an organic thin-film transistor having the lower threshold voltage can be realized. COPYRIGHT: (C)2006,JPO&NCIPI

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